A 310-340-GHz Coupled-Line Voltage-Controlled Oscillator Based on 0.25-mu m InP HBT Technology
DC Field | Value | Language |
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dc.contributor.author | Yoon, Daekeun | - |
dc.contributor.author | Yun, Jongwon | - |
dc.contributor.author | Rieh, Jae-Sung | - |
dc.date.accessioned | 2021-09-04T14:54:47Z | - |
dc.date.available | 2021-09-04T14:54:47Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2015-07 | - |
dc.identifier.issn | 2156-342X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/93196 | - |
dc.description.abstract | A THz voltage-controlled oscillator (VCO) has been developed in this work based on a 0.25-mu m InP heterojunction bipolar transistor (HBT) technology. The cross-coupled push-push oscillator adopted a novel coupled-line topology, in which the DC blocking capacitors and the load inductance are replaced by a pair of coupled-lines to improve the oscillation frequency and reduce the circuit area. Also, a base bias tuning was employed for effective oscillation frequency tuning. The circuit exhibited the voltage tuning from 309.5 GHz to 339.5 GHz, leading to a tuning range of 30 GHz. The maximum output power was -6.5 dBm at 334 GHz, achieved with a dc power consumption of 13.5 mW. Measured phase noise was -86.55 at 10-MHz offset. The circuit occupies only 0.014 mm(2) excluding the probing pads. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | A 310-340-GHz Coupled-Line Voltage-Controlled Oscillator Based on 0.25-mu m InP HBT Technology | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Rieh, Jae-Sung | - |
dc.identifier.doi | 10.1109/TTHZ.2015.2443432 | - |
dc.identifier.scopusid | 2-s2.0-85027926599 | - |
dc.identifier.wosid | 000358722600020 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, v.5, no.4, pp.652 - 654 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY | - |
dc.citation.title | IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 5 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 652 | - |
dc.citation.endPage | 654 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Frequency control | - |
dc.subject.keywordAuthor | heterjunction bipolar transistor (HBT) | - |
dc.subject.keywordAuthor | voltage-controlled oscillators (VCOs) | - |
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