Effect of Sn Doping on the Thermoelectric Properties of n-type Bi-2(Te,Se)(3) Alloys
- Authors
- Lee, Jae-Uk; Lee, Deuk-Hee; Kwon, Beomjin; Hyun, Dow-Bin; Nahm, Sahn; Baek, Seung-Hyub; Kim, Jin-Sang
- Issue Date
- 6월-2015
- Publisher
- SPRINGER
- Keywords
- Bismuth telluride; thermoelectric; Sn doping; mechanical deformation; hot press
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.44, no.6, pp.1926 - 1930
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 44
- Number
- 6
- Start Page
- 1926
- End Page
- 1930
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/93364
- DOI
- 10.1007/s11664-014-3598-z
- ISSN
- 0361-5235
- Abstract
- In the present work, 0.01-0.05wt.% Sn-doped Bi-2(Te0.9Se0.1)(3) alloys were prepared by mechanical deformation followed by hot pressing, and their thermoelectric properties were studied. We observed that the Sn element is a very effective dopant as an acceptor to control the carrier concentration in the n-type Bi-2(Te0.9Se0.1)(3) alloys to optimize their thermoelectric property. The n-type carrier concentration can be controlled from 4.2 x 10(19)/cm(3) to 2.4 x 10(19)/cm(3) by 0.05wt.% Sn-doping. While the Seebeck coefficient and the electrical resistivity are both increased with doping, the power factor remains the same. Therefore, we found that the thermoelectric figure-of-merit becomes maximized at 0.75 when the thermal conductivity has a minimum value for the 0.03wt.% Sn-doped sample.
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