Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices
DC Field | Value | Language |
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dc.contributor.author | Kim, Myung Ju | - |
dc.contributor.author | Jeon, Dong Su | - |
dc.contributor.author | Park, Ju Hyun | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-04T16:03:31Z | - |
dc.date.available | 2021-09-04T16:03:31Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-05-18 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/93538 | - |
dc.description.abstract | This paper reports the bipolar resistive switching characteristics of TaNx-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from -0.82V to -0.62 V, whereas the set voltage ranges from 1.01V to 1.30V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (> 10(5) s) and pulse-switching endurance (> 10(6) cycles) properties. These results indicate that TaNx-based ReRAM devices have a potential for future nonvolatile memory devices. (C) 2015 AIP Publishing LLC. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1063/1.4921349 | - |
dc.identifier.wosid | 000355009400034 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.106, no.20 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 106 | - |
dc.citation.number | 20 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
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