Thin Ion-Gel Dielectric Layer to Enhance the Stability of Polymer Transistors
DC Field | Value | Language |
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dc.contributor.author | Lee, Sung Won | - |
dc.contributor.author | Shin, Minkwan | - |
dc.contributor.author | Park, Jae Yoon | - |
dc.contributor.author | Kim, Bong Soo | - |
dc.contributor.author | Tu, Deyu | - |
dc.contributor.author | Jeon, Sanghun | - |
dc.contributor.author | Jeong, Unyong | - |
dc.date.accessioned | 2021-09-04T16:26:59Z | - |
dc.date.available | 2021-09-04T16:26:59Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-05 | - |
dc.identifier.issn | 1947-2935 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/93684 | - |
dc.description.abstract | Poly(3-hexylthiophene)(P3HT) transistors with a thin ion-gel gate dielectric layer (100 nm thickness) was fabricated. The thin ion-gel dielectric layer retarded the capacitance drop at high frequencies and the diffusion of the ionic molecules in the polymer active layer that are severe drawbacks of the ion-gel dielectric transistors. Thereby, the thin ion-gel transistors showed hysteresis-free I-V characteristics, less frequency-dependence, and enhanced bias-stability. The average charge mobility was similar to 2 cm(2)/Vs and the on/off ratio was 10(4)similar to 10(5). The dependence of the capacitance and the kinetics of ion translation on the thickness of the ion-gel were discussed by both experiments and theoretical calculations. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | LOW-VOLTAGE | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | FILM TRANSISTORS | - |
dc.subject | TRANSPORT | - |
dc.title | Thin Ion-Gel Dielectric Layer to Enhance the Stability of Polymer Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanghun | - |
dc.identifier.doi | 10.1166/sam.2015.1890 | - |
dc.identifier.scopusid | 2-s2.0-84961289052 | - |
dc.identifier.wosid | 000349140900008 | - |
dc.identifier.bibliographicCitation | SCIENCE OF ADVANCED MATERIALS, v.7, no.5, pp.874 - 880 | - |
dc.relation.isPartOf | SCIENCE OF ADVANCED MATERIALS | - |
dc.citation.title | SCIENCE OF ADVANCED MATERIALS | - |
dc.citation.volume | 7 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 874 | - |
dc.citation.endPage | 880 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | FILM TRANSISTORS | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordAuthor | Organic Thin Film Transistors | - |
dc.subject.keywordAuthor | Polymer Transistors | - |
dc.subject.keywordAuthor | Ion-Gel Dielectric | - |
dc.subject.keywordAuthor | High Capacitance | - |
dc.subject.keywordAuthor | Device Stability | - |
dc.subject.keywordAuthor | poly(3-hexylthiophene) | - |
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