Thin Ion-Gel Dielectric Layer to Enhance the Stability of Polymer Transistors
- Authors
- Lee, Sung Won; Shin, Minkwan; Park, Jae Yoon; Kim, Bong Soo; Tu, Deyu; Jeon, Sanghun; Jeong, Unyong
- Issue Date
- 5월-2015
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Organic Thin Film Transistors; Polymer Transistors; Ion-Gel Dielectric; High Capacitance; Device Stability; poly(3-hexylthiophene)
- Citation
- SCIENCE OF ADVANCED MATERIALS, v.7, no.5, pp.874 - 880
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENCE OF ADVANCED MATERIALS
- Volume
- 7
- Number
- 5
- Start Page
- 874
- End Page
- 880
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/93684
- DOI
- 10.1166/sam.2015.1890
- ISSN
- 1947-2935
- Abstract
- Poly(3-hexylthiophene)(P3HT) transistors with a thin ion-gel gate dielectric layer (100 nm thickness) was fabricated. The thin ion-gel dielectric layer retarded the capacitance drop at high frequencies and the diffusion of the ionic molecules in the polymer active layer that are severe drawbacks of the ion-gel dielectric transistors. Thereby, the thin ion-gel transistors showed hysteresis-free I-V characteristics, less frequency-dependence, and enhanced bias-stability. The average charge mobility was similar to 2 cm(2)/Vs and the on/off ratio was 10(4)similar to 10(5). The dependence of the capacitance and the kinetics of ion translation on the thickness of the ion-gel were discussed by both experiments and theoretical calculations.
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Collections - College of Science and Technology > Display Convergence in Division of Display and Semiconductor Physics > 1. Journal Articles
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