Etching mechanisms of (In, Ga, Zn)O thin films in CF4/Ar/O-2 inductively coupled plasma
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Kwangsoo | - |
dc.contributor.author | Efremov, Alexander | - |
dc.contributor.author | Lee, Junmyung | - |
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.contributor.author | Yeom, Geun Young | - |
dc.date.accessioned | 2021-09-04T16:29:41Z | - |
dc.date.available | 2021-09-04T16:29:41Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-05 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/93701 | - |
dc.description.abstract | The authors investigated the etching characteristics and mechanisms of (In, Ga, Zn)O (IGZO) thin films in CF4/Ar/O-2 inductively coupled plasmas. The etching rates of IGZO as well as the IGZO/SiO2 and IGZO/Al2O3 etching selectivities were measured as functions of O-2 content in a feed gas (0%-50%) and gas pressure (p = 4-10 mTorr) at fixed input power (W-inp = 700 W) and bias power (W-dc = 200 W). It was found that the IGZO etching rate decreases monotonically toward O-2 rich plasma but exhibits a maximum under gas pressure conditions. The zero-dimensional plasma model with Langmuir probe diagnostics data provided the information on plasma parameters and densities of plasma active species. The model-based analysis shows the dominance of the ion-flux-limited etching regime at p >= 6 mTorr as well as the noticeable influence of CFx radicals on the overall etching kinetics. (C) 2015 American Vacuum Society. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | ZNO | - |
dc.subject | MODEL | - |
dc.subject | AR | - |
dc.subject | CHEMISTRY | - |
dc.subject | RATIO | - |
dc.subject | C2F6 | - |
dc.subject | SIO2 | - |
dc.subject | CF4 | - |
dc.subject | O-2 | - |
dc.subject | N-2 | - |
dc.title | Etching mechanisms of (In, Ga, Zn)O thin films in CF4/Ar/O-2 inductively coupled plasma | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.1116/1.4913735 | - |
dc.identifier.scopusid | 2-s2.0-84923927195 | - |
dc.identifier.wosid | 000355741800027 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.33, no.3 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.volume | 33 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ZNO | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordPlus | AR | - |
dc.subject.keywordPlus | CHEMISTRY | - |
dc.subject.keywordPlus | RATIO | - |
dc.subject.keywordPlus | C2F6 | - |
dc.subject.keywordPlus | SIO2 | - |
dc.subject.keywordPlus | CF4 | - |
dc.subject.keywordPlus | O-2 | - |
dc.subject.keywordPlus | N-2 | - |
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