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Comparison of Gas Sensors Based on Oxygen Plasma-Treated Carbon Nanotube Network Films with Different Semiconducting Contents

Authors
Ham, Seung WooHong, Hyun PyoKim, Jin WoongKim, Jong HyunKim, Ki BumPark, Chan WonMin, Nam Ki
Issue Date
5월-2015
Publisher
SPRINGER
Keywords
Gas sensor; semiconductor SWCNT; oxygen plasma treatment; sensitivity
Citation
JOURNAL OF ELECTRONIC MATERIALS, v.44, no.5, pp.1344 - 1350
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF ELECTRONIC MATERIALS
Volume
44
Number
5
Start Page
1344
End Page
1350
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/93734
DOI
10.1007/s11664-014-3586-3
ISSN
0361-5235
Abstract
We report on the effect of oxygen plasma treatment on the performance of single-wall carbon nanotube (SWCNT) NH3 gas sensors with different semiconducting contents (66% and 90% semiconducting SWCNTs). The performance of chemical sensors based on SWCNT networks depends on the concentration of semiconducting SWCNTs (s-SWCNTs), whose conductance can be significantly modulated by the absorbed molecules and the surface functionalization. After oxygen plasma treatment, the 66% s-SWCNT sample showed an increase in sensitivity from 0.0275%/ppm to 0.1525%/ppm (5.5 times), while the 90% s-SWCNT device demonstrated an increase in sensitivity from 0.1184%/ppm to 1.5707%/ppm (13 times). These results correspond to improvements in sensitivity of 57 times and 10 times compared with pristine and plasma-treated 66% s-SWCNT samples, respectively. In addition, the plasma-treated sensors exhibited much faster response and recovery times than the pristine one. The large improvement in performance was explained by the presence of oxygen-containing functional groups and the sp(2)-sp(3) structure change of SWCNTs, which changes the binding energy while increasing the uptake of polar molecules such as NH3.
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