Fabrication of controllable and stable In2O3 nanowire transistors using an octadecylphosphonic acid self-assembled monolayer
DC Field | Value | Language |
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dc.contributor.author | Lim, Taekyung | - |
dc.contributor.author | Han, Junebeom | - |
dc.contributor.author | Seo, Keumyoung | - |
dc.contributor.author | Joo, Min-Kyu | - |
dc.contributor.author | Kim, Jae-Sung | - |
dc.contributor.author | Kim, Wung-Yeon | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.contributor.author | Ju, Sanghyun | - |
dc.date.accessioned | 2021-09-04T17:17:07Z | - |
dc.date.available | 2021-09-04T17:17:07Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-04-10 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/93850 | - |
dc.description.abstract | The controllability and stability of nanowire transistor characteristics are essential for the development of low-noise and fast-switching nano-electronic devices. In this study, the positive shift of threshold voltage and the improvement of interface quality on In2O3 nanowire transistors were simultaneously achieved by using octadecylphosphonic acid (OD-PA) self-assembly. Following the chemical bond of OD-PA molecules on the surface of In2O3 nanowires, the threshold voltage was positively shifted to 2.95 V, and the noise amplitude decreased to approximately 87.5%. The results suggest that an OD-PA self-assembled monolayer can be used to manipulate and stabilize the transistor characteristics of nanowire-based memory and display devices that require high-sensitivity, low-noise, and fast-response. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | ELECTRICAL NOISE | - |
dc.subject | RTS FLUCTUATIONS | - |
dc.subject | OXIDE | - |
dc.subject | TRANSPARENT | - |
dc.subject | SURFACE | - |
dc.subject | MOLECULES | - |
dc.subject | NANOSTRUCTURES | - |
dc.subject | HYSTERESIS | - |
dc.subject | DEVICES | - |
dc.title | Fabrication of controllable and stable In2O3 nanowire transistors using an octadecylphosphonic acid self-assembled monolayer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Gyu-Tae | - |
dc.identifier.doi | 10.1088/0957-4484/26/14/145203 | - |
dc.identifier.scopusid | 2-s2.0-84925428468 | - |
dc.identifier.wosid | 000352634700007 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.26, no.14 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 26 | - |
dc.citation.number | 14 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | ELECTRICAL NOISE | - |
dc.subject.keywordPlus | RTS FLUCTUATIONS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | MOLECULES | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.subject.keywordPlus | HYSTERESIS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordAuthor | nanowire transistor | - |
dc.subject.keywordAuthor | self-assembled monolayer | - |
dc.subject.keywordAuthor | stability | - |
dc.subject.keywordAuthor | reliability | - |
dc.subject.keywordAuthor | water repellent | - |
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