Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices
DC Field | Value | Language |
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dc.contributor.author | Kim, Jun Ho | - |
dc.contributor.author | Lee, Hankyeol | - |
dc.contributor.author | Na, Jin-Young | - |
dc.contributor.author | Kim, Sun-Kyung | - |
dc.contributor.author | Yoo, Young-Zo | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-04T17:40:39Z | - |
dc.date.available | 2021-09-04T17:40:39Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-04 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/93956 | - |
dc.description.abstract | We report on the optimization of the optical and electrical properties of IGZO/Ag/IGZO multilayer films as a function of IGZO thickness. The transmission window slightly widened and shifted toward lower energies with increasing IGZO thickness. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) showed transmittance 88.7% at 520 nm. The optical transmittance spectra were examined by finite-difference time-domain (FDTD) simulations. The carrier concentration decreased from 1.73 x 10(22) to 4.99 x 10(21) cm(-3) with increasing the IGZO thickness, while the charge mobility insignificantly changed from 19.07 to 19.62 cm(2)/V. The samples had sheet resistances of 4.17-4.39 Omega/sq with increasing IGZO thickness, while the resistivity increased from 1.89 x 10(-5) to 6.43 x 10(-5) Omega cm. The 39 nm-thick IGZO multilayer sample had a smooth surface with a root mean square roughness of 0.63 nm. The IGZO(39 nm)/Ag(19 nm)/IGZO(39 nm) multilayer showed a Haacke's FOM of 49.94 x 10(-3) Omega(-1). (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | TRANSPARENT | - |
dc.subject | CONDUCTOR | - |
dc.subject | DESIGN | - |
dc.title | Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1016/j.cap.2015.02.003 | - |
dc.identifier.scopusid | 2-s2.0-84922454189 | - |
dc.identifier.wosid | 000350582900005 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.15, no.4, pp.452 - 455 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 15 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 452 | - |
dc.citation.endPage | 455 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001988705 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | CONDUCTOR | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordAuthor | Indium gallium zinc oxide | - |
dc.subject.keywordAuthor | Ag | - |
dc.subject.keywordAuthor | Multilayer | - |
dc.subject.keywordAuthor | Transparent conducting electrode | - |
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