A D-band Active Imager in a SiGe HBT Technology
DC Field | Value | Language |
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dc.contributor.author | Yoon, Daekeun | - |
dc.contributor.author | Song, Kiryong | - |
dc.contributor.author | Kim, Jungsoo | - |
dc.contributor.author | Kaynak, Mehmet | - |
dc.contributor.author | Tillack, Bernd | - |
dc.contributor.author | Rieh, Jae-Sung | - |
dc.date.accessioned | 2021-09-04T17:48:15Z | - |
dc.date.available | 2021-09-04T17:48:15Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-04 | - |
dc.identifier.issn | 1866-6892 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/94011 | - |
dc.description.abstract | In this paper, an amplifier and a detector operating near 140 GHz have been developed and integrated together with an on-chip antenna for an integrated active imager based on a 0.13-mu m SiGe HBT technology. The 5-stage differential common-emitter (CE) amplifier shows a peak gain of 14 dB and noise figure (NF) down to 10 dB around 140 GHz with a DC power dissipation of 18 mW. The common-base (CB) differential detector exhibits a peak responsivity of 52.5 kV/W and a noise equivalent power (NEP) of 3.3 pW/Hz(1/2). For the integrated imager, a peak responsivity of 1,740 kV/W and a minimum NEP of 80 fW/Hz(1/2) were achieved with a DC power dissipation of 18 mW. With the fabricated active imager with on-chip antenna, which occupies an area of 2,200 x 600 mu m(2) including the antenna and bonding pads, images of various objects were successfully acquired. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.subject | ARRAY | - |
dc.subject | WAVE | - |
dc.subject | DESIGN | - |
dc.subject | MODULE | - |
dc.title | A D-band Active Imager in a SiGe HBT Technology | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Rieh, Jae-Sung | - |
dc.identifier.doi | 10.1007/s10762-014-0137-1 | - |
dc.identifier.scopusid | 2-s2.0-84925491327 | - |
dc.identifier.wosid | 000350823500002 | - |
dc.identifier.bibliographicCitation | JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, v.36, no.4, pp.335 - 349 | - |
dc.relation.isPartOf | JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES | - |
dc.citation.title | JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES | - |
dc.citation.volume | 36 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 335 | - |
dc.citation.endPage | 349 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ARRAY | - |
dc.subject.keywordPlus | WAVE | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | MODULE | - |
dc.subject.keywordAuthor | heterodyne bipolar transistors | - |
dc.subject.keywordAuthor | bipolar integrated circuit | - |
dc.subject.keywordAuthor | imaging | - |
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