Forming-free resistive switching characteristics and improved reliability in sub-stoichiometric NbNx films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Hee-Dong | - |
dc.contributor.author | Yun, Min Ju | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-04T17:57:43Z | - |
dc.date.available | 2021-09-04T17:57:43Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2015-04 | - |
dc.identifier.issn | 1862-6254 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/94046 | - |
dc.description.abstract | In this study, we demonstrate forming-free and reliable resistive switching (RS) characteristics by controlling the stoichiometry of niobium nitride (NbNx) films. Compared to a perfect stoichiometric NbNx film, a decrease of 6% nitrogen content and an increase of 5% O-2 content are found in the sub-stoichiometric NbNx sample (s-NbNx), and a structural change for the s-NbNx film is observed from X-ray diffraction results, which results in the possibility of abundant defect generation in the s-NbNx film at virgin state. In the RS test, the s-NbNx film normally carries out well without initial forming because of the already-formed conducting filaments; in particular, in the reliability study, the s-NbNx film shows more stable dc cycling characteristics for 1000 cycles without any degradation and smaller variations in the operating current and voltage characteristics. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | RRAM | - |
dc.title | Forming-free resistive switching characteristics and improved reliability in sub-stoichiometric NbNx films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1002/pssr.201510022 | - |
dc.identifier.scopusid | 2-s2.0-84928269569 | - |
dc.identifier.wosid | 000353409700011 | - |
dc.identifier.bibliographicCitation | Physica Status Solidi-Rapid Research Letters, v.9, no.4, pp.264 - 268 | - |
dc.relation.isPartOf | Physica Status Solidi-Rapid Research Letters | - |
dc.citation.title | Physica Status Solidi-Rapid Research Letters | - |
dc.citation.volume | 9 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 264 | - |
dc.citation.endPage | 268 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | RRAM | - |
dc.subject.keywordAuthor | niobium nitrides | - |
dc.subject.keywordAuthor | thin films | - |
dc.subject.keywordAuthor | resistive switching | - |
dc.subject.keywordAuthor | resistive random access memories | - |
dc.subject.keywordAuthor | stoichiometry | - |
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