High-Performance Hybrid Buffer Layer Using 1,4,5,8,9,11-Hexaazatriphenylenehexacarbonitrile/Molybdenum Oxide in Inverted Top-Emitting Organic Light-Emitting Diodes
- Authors
- Park, Cheol Hwee; Lee, Hyun Jun; Hwang, Ju Hyun; Kim, Kyu Nyun; Shim, Yong Sub; Jung, Sun-Gyu; Park, Chan Hyuk; Park, Young Wook; Ju, Byeong-Kwon
- Issue Date
- 25-3월-2015
- Publisher
- AMER CHEMICAL SOC
- Keywords
- inverted top-emitting organic light-emitting diodes (ITEOLEDs); buffer Layer; 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HATCN); molybdenum oxide (MoO3)
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.7, no.11, pp.6047 - 6053
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 7
- Number
- 11
- Start Page
- 6047
- End Page
- 6053
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/94093
- DOI
- 10.1021/am5091066
- ISSN
- 1944-8244
- Abstract
- A high-performance 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HATCN)/molybdenum oxide (MoO3) hybrid buffer layer with high hole-injection efficiency and superior plasma resistance under the sputtering process was developed. The HATCN enhances the hole-injection efficiency, and the MoO3 effectively protects the underlying organic layers from plasma damage during deposition by sputtering. This improves the characteristics of inverted top-emitting organic light-emitting diodes using a top transparent conductive oxide electrode. The device using the hybrid buffer layer showed the highest electroluminescence characteristics among devices with other buffer layers. The high hole-injection efficiency of HATCN was shown by the J-F curve of hole-only devices, and the plasma protection performance of MoO3 was shown by atomic force microscope surface morphology images of the buffer layer film after O-2 plasma treatment.
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