High-performance carbon nanotube thin-film transistors on flexible paper substrates
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liu, Na | - |
dc.contributor.author | Yun, Ki Nam | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Shim, Joon Hyung | - |
dc.contributor.author | Lee, Cheol Jin | - |
dc.date.accessioned | 2021-09-04T18:19:42Z | - |
dc.date.available | 2021-09-04T18:19:42Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2015-03-09 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/94143 | - |
dc.description.abstract | Single-walled carbon nanotubes (SWCNTs) are promising materials as active channels for flexible transistors owing to their excellent electrical and mechanical properties. However, flexible SWCNT transistors have never been realized on paper substrates, which are widely used, inexpensive, and recyclable. In this study, we fabricated SWCNT thin-film transistors on photo paper substrates. The devices exhibited a high on/off current ratio of more than 10 6 and a field-effect mobility of approximately 3 cm(2)/V.s. The proof-of-concept demonstration indicates that SWCNT transistors on flexible paper substrates could be applied as low-cost and recyclable flexible electronics. (C) 2015 AIP Publishing LLC. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | INTEGRATED-CIRCUITS | - |
dc.subject | ORGANIC TRANSISTORS | - |
dc.subject | ELECTRONICS | - |
dc.subject | NETWORKS | - |
dc.subject | MATRIX | - |
dc.subject | OXIDE | - |
dc.title | High-performance carbon nanotube thin-film transistors on flexible paper substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.contributor.affiliatedAuthor | Shim, Joon Hyung | - |
dc.contributor.affiliatedAuthor | Lee, Cheol Jin | - |
dc.identifier.doi | 10.1063/1.4914400 | - |
dc.identifier.scopusid | 2-s2.0-84924674853 | - |
dc.identifier.wosid | 000351397600052 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.106, no.10 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 106 | - |
dc.citation.number | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | INTEGRATED-CIRCUITS | - |
dc.subject.keywordPlus | ORGANIC TRANSISTORS | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | NETWORKS | - |
dc.subject.keywordPlus | MATRIX | - |
dc.subject.keywordPlus | OXIDE | - |
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