Thickness dependence of uniaxial anisotropy fields in GaMnAs films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bac, Seul-Ki | - |
dc.contributor.author | Lee, Hakjoon | - |
dc.contributor.author | Lee, Sangyeop | - |
dc.contributor.author | Choi, Seonghoon | - |
dc.contributor.author | Yoo, Taehee | - |
dc.contributor.author | Lee, Sanghoon | - |
dc.contributor.author | Liu, Xinyu | - |
dc.contributor.author | Furdyna, Jacek | - |
dc.date.accessioned | 2021-09-04T18:36:58Z | - |
dc.date.available | 2021-09-04T18:36:58Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2015-03 | - |
dc.identifier.issn | 1882-0778 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/94238 | - |
dc.description.abstract | Our investigation of thin GaMnAs films with different thicknesses revealed that the magnetic properties of this material strongly depend on film thickness. For this study, a single GaMnAs film was selectively etched, and its properties were then investigated by planar Hall effect measurements. A particularly important conclusion from the results is the emergence of a uniaxial anisotropy field along the [100] crystalline direction, which increases rapidly with increasing film thickness. We argue that such thickness dependence of the [100] uniaxial anisotropy results from the crystal structure of the film, rather than from the effects of the interface between the GaMnAs and the substrate. (C) 2015 The Japan Society of Applied Physics. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | MAGNETIC-ANISOTROPY | - |
dc.subject | SEMICONDUCTOR-FILMS | - |
dc.subject | GA1-XMNXAS | - |
dc.title | Thickness dependence of uniaxial anisotropy fields in GaMnAs films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Sanghoon | - |
dc.identifier.doi | 10.7567/APEX.8.033201 | - |
dc.identifier.scopusid | 2-s2.0-84923973303 | - |
dc.identifier.wosid | 000352220700017 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS EXPRESS, v.8, no.3 | - |
dc.relation.isPartOf | APPLIED PHYSICS EXPRESS | - |
dc.citation.title | APPLIED PHYSICS EXPRESS | - |
dc.citation.volume | 8 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MAGNETIC-ANISOTROPY | - |
dc.subject.keywordPlus | SEMICONDUCTOR-FILMS | - |
dc.subject.keywordPlus | GA1-XMNXAS | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.