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Flexible and Conductive Graphene-Poly (diallyldimethylammoniumchloride) Buckypaper

Authors
You, XueqiuPak, James Jungho
Issue Date
Mar-2015
Publisher
AMER SCIENTIFIC PUBLISHERS
Keywords
Graphene-PDDA Buckypaper; Flexible; Conductive; Low-Temperature Annealing
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.15, no.3, pp.2001 - 2008
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume
15
Number
3
Start Page
2001
End Page
2008
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/94327
DOI
10.1166/jnn.2015.10234
ISSN
1533-4880
Abstract
This paper describes the fabrication and characterization of flexible, conductive reduced graphene oxide (rGO)-poly(diallyldimethylammoniumchloride) (PDDA) buckypaper (BP). PDDA acts as a reducing agent to prepare an rGO-PDDA nanosheet dispersion from graphite oxide. The incorporation of PDDA as a "glue" molecule successfully binds rGO nanosheets into BPs with strong interlayer binding. The resulting BPs were characterized by scanning electronic microscopy (SEM), Raman, energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and resistivity measurements. The sp(2) structure was greatly restored by the PDDA-induced reduction. Moreover, rGO was chemically doped from the adsorbed PDDA, which causes the Raman G band to shift from similar to 1585 to similar to 1610 cm(-1). This chemical doping substantially increased the density of the free charge carriers in rGO and thereby further enhanced the electrical conductivity of the rGO-BR Good interlayer connection in the rGO percolating network was obtained after thermal annealing at higher than similar to 250 degrees C. The resulting rGO-PDDA-BPs exhibited an isotropic sheet resistance as low as similar to 100 Omega/sq, which indicates a reduction by six orders of magnitude compared to the GO-BPs resistance before annealing. This PDDA-induced reduction with a low-temperature annealing process preserved the BPs' structural integrity and mechanical flexibility, thus overcoming the fragility problems with high-temperature annealing.
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