Performance enhancement of pentacene and F16CuPc-based low-voltage devices using cross-linked blend gate dielectrics
DC Field | Value | Language |
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dc.contributor.author | Shin, Eun-Sol | - |
dc.contributor.author | Oh, Jeong-Do | - |
dc.contributor.author | Kim, Dae-Kyu | - |
dc.contributor.author | Ha, Young-Geun | - |
dc.contributor.author | Choi, Jong-Ho | - |
dc.date.accessioned | 2021-09-04T19:18:51Z | - |
dc.date.available | 2021-09-04T19:18:51Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2015-02-04 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/94421 | - |
dc.description.abstract | Herein is reported the fabrication and systematic comparative analysis of low-voltage organic filed-effect transistors (OFETs) and inverters using bare ZrOx dielectrics and inorganic-organic hybrid CZB (cross-linked ZrOx/1,6-bis(trimethoxysily)hexane blend) dielectrics. Solution-processed sol-gel chemistry was employed to prepare the gate dielectrics. Two active layers of p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) were deposited on the dielectrics using the neutral cluster beam deposition method. Compared with bare ZrOx-based transistors and inverters, the CZB-based devices with low leakage current and high capacitance exhibited significantly higher hole and electron carrier mobilities of (0.12 --> 1.03) and (1.3 x 10(-3) --> 4.9 x 10(-3)) cm(2) (Vs)(-1), respectively, and enhanced gains of (9.4 --> 13.3), together with large output voltage swings and sharp inversions in the voltage transfer characteristics (VTCs). The CZB-based inverters also exhibited improved noise margins due to the higher gain and better symmetry of the VTCs compared with their bare ZrOx-based counterparts. The results indicate that on the basis of the enhanced electrical properties of CZB dielectrics and the growth of high-quality crystalline semiconducting films on CZB dielectric surfaces, such high-performance devices operating at low voltage levels are promising potential components for integrated circuits. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | PROCESSED METAL-OXIDE | - |
dc.subject | ORGANIC TRANSISTORS | - |
dc.subject | LOW-TEMPERATURE | - |
dc.subject | LOGIC GATES | - |
dc.subject | CIRCUITS | - |
dc.subject | INTERFACE | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | SUBSTRATE | - |
dc.title | Performance enhancement of pentacene and F16CuPc-based low-voltage devices using cross-linked blend gate dielectrics | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Jong-Ho | - |
dc.identifier.doi | 10.1088/0022-3727/48/4/045105 | - |
dc.identifier.scopusid | 2-s2.0-84921033573 | - |
dc.identifier.wosid | 000348300900006 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.48, no.4 | - |
dc.relation.isPartOf | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 48 | - |
dc.citation.number | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | PROCESSED METAL-OXIDE | - |
dc.subject.keywordPlus | ORGANIC TRANSISTORS | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | LOGIC GATES | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordAuthor | ZrOx dielectrics | - |
dc.subject.keywordAuthor | cross-linked ZrOx/1,6-bis(trimethoxysily)hexane blend | - |
dc.subject.keywordAuthor | complementary inverter | - |
dc.subject.keywordAuthor | neutral cluster beam deposition method | - |
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