Performance enhancement of pentacene and F16CuPc-based low-voltage devices using cross-linked blend gate dielectrics
- Authors
- Shin, Eun-Sol; Oh, Jeong-Do; Kim, Dae-Kyu; Ha, Young-Geun; Choi, Jong-Ho
- Issue Date
- 4-2월-2015
- Publisher
- IOP PUBLISHING LTD
- Keywords
- ZrOx dielectrics; cross-linked ZrOx/1,6-bis(trimethoxysily)hexane blend; complementary inverter; neutral cluster beam deposition method
- Citation
- JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.48, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Volume
- 48
- Number
- 4
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/94421
- DOI
- 10.1088/0022-3727/48/4/045105
- ISSN
- 0022-3727
- Abstract
- Herein is reported the fabrication and systematic comparative analysis of low-voltage organic filed-effect transistors (OFETs) and inverters using bare ZrOx dielectrics and inorganic-organic hybrid CZB (cross-linked ZrOx/1,6-bis(trimethoxysily)hexane blend) dielectrics. Solution-processed sol-gel chemistry was employed to prepare the gate dielectrics. Two active layers of p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) were deposited on the dielectrics using the neutral cluster beam deposition method. Compared with bare ZrOx-based transistors and inverters, the CZB-based devices with low leakage current and high capacitance exhibited significantly higher hole and electron carrier mobilities of (0.12 --> 1.03) and (1.3 x 10(-3) --> 4.9 x 10(-3)) cm(2) (Vs)(-1), respectively, and enhanced gains of (9.4 --> 13.3), together with large output voltage swings and sharp inversions in the voltage transfer characteristics (VTCs). The CZB-based inverters also exhibited improved noise margins due to the higher gain and better symmetry of the VTCs compared with their bare ZrOx-based counterparts. The results indicate that on the basis of the enhanced electrical properties of CZB dielectrics and the growth of high-quality crystalline semiconducting films on CZB dielectric surfaces, such high-performance devices operating at low voltage levels are promising potential components for integrated circuits.
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