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Compositional homogeneity and X-ray topographic analyses of CdTexSe1-x grown by the vertical Bridgman technique

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dc.contributor.authorRoy, U. N.-
dc.contributor.authorBolotnikov, A. E.-
dc.contributor.authorCamarda, G. S.-
dc.contributor.authorCui, Y.-
dc.contributor.authorHossain, A.-
dc.contributor.authorLee, K.-
dc.contributor.authorLee, W.-
dc.contributor.authorTappero, R.-
dc.contributor.authorYang, Ge-
dc.contributor.authorCui, Y.-
dc.contributor.authorBurger, A.-
dc.contributor.authorJames, R. B.-
dc.date.accessioned2021-09-04T19:27:54Z-
dc.date.available2021-09-04T19:27:54Z-
dc.date.created2021-06-15-
dc.date.issued2015-02-01-
dc.identifier.issn0022-0248-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/94443-
dc.description.abstractWe grew CdTexSe1-x crystals with nominal Se concentrations of 5%, 7%, and 10% by the vertical Bridgman technique, and evaluated their compositional homogeneity and structural quality at the NSLS' X-ray fluorescence and white beam X-ray topography beam lines. Both X-ray fluorescence and photoluminescence mapping revealed very high compositional homogeneity of the CdTexSe1-x crystals. We noted that those crystals with higher concentrations of Se were more prone to twinning than those with a lower content. The crystals were fairly free from strains and contained low concentrations of sub-grain boundaries and their networks. Published by Elsevier B.V.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectCDTE-
dc.subjectCRYSTAL-
dc.subjectPERFORMANCE-
dc.subjectSEGREGATION-
dc.subjectDEFECTS-
dc.titleCompositional homogeneity and X-ray topographic analyses of CdTexSe1-x grown by the vertical Bridgman technique-
dc.typeArticle-
dc.contributor.affiliatedAuthorLee, K.-
dc.contributor.affiliatedAuthorLee, W.-
dc.identifier.doi10.1016/j.jcrysgro.2014.10.057-
dc.identifier.scopusid2-s2.0-84913582497-
dc.identifier.wosid000346857500007-
dc.identifier.bibliographicCitationJOURNAL OF CRYSTAL GROWTH, v.411, pp.34 - 37-
dc.relation.isPartOfJOURNAL OF CRYSTAL GROWTH-
dc.citation.titleJOURNAL OF CRYSTAL GROWTH-
dc.citation.volume411-
dc.citation.startPage34-
dc.citation.endPage37-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaCrystallography-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryCrystallography-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusCDTE-
dc.subject.keywordPlusCRYSTAL-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusSEGREGATION-
dc.subject.keywordPlusDEFECTS-
dc.subject.keywordAuthorCharacterization-
dc.subject.keywordAuthorDefects-
dc.subject.keywordAuthorTe-inclusions-
dc.subject.keywordAuthorSubgrain boundary-
dc.subject.keywordAuthorCdTeSe-
dc.subject.keywordAuthorSemiconducting II-VI materials-
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