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Compositional homogeneity and X-ray topographic analyses of CdTexSe1-x grown by the vertical Bridgman technique
- Authors
- Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Lee, K.; Lee, W.; Tappero, R.; Yang, Ge; Cui, Y.; Burger, A.; James, R. B.
- Issue Date
- 1-2월-2015
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Characterization; Defects; Te-inclusions; Subgrain boundary; CdTeSe; Semiconducting II-VI materials
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.411, pp.34 - 37
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 411
- Start Page
- 34
- End Page
- 37
- ISSN
- 0022-0248
- Abstract
- We grew CdTexSe1-x crystals with nominal Se concentrations of 5%, 7%, and 10% by the vertical Bridgman technique, and evaluated their compositional homogeneity and structural quality at the NSLS' X-ray fluorescence and white beam X-ray topography beam lines. Both X-ray fluorescence and photoluminescence mapping revealed very high compositional homogeneity of the CdTexSe1-x crystals. We noted that those crystals with higher concentrations of Se were more prone to twinning than those with a lower content. The crystals were fairly free from strains and contained low concentrations of sub-grain boundaries and their networks. Published by Elsevier B.V.
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