Lattice Distortion Analysis of Nonpolar a-plane (11(2)over-bar0) GaN Films by Using a Grazing-Incidence X-Ray Diffraction Technique
DC Field | Value | Language |
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dc.contributor.author | Seo, Yong Gon | - |
dc.contributor.author | Kim, Jihoon | - |
dc.contributor.author | Hwang, Sung-Min | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Jang, Soohwan | - |
dc.contributor.author | Kim, Heesan | - |
dc.contributor.author | Baik, Kwang Hyeon | - |
dc.date.accessioned | 2021-09-04T19:48:36Z | - |
dc.date.available | 2021-09-04T19:48:36Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2015-02 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/94595 | - |
dc.description.abstract | This work examines the anisotropic microstructure and the lattice distortions of nonpolar a-plane (11 (2) over bar0) GaN (a-GaN) films by using the grazing-incidence X-ray diffraction technique. Faulted a-GaN films typically exhibit an in-plane anisotropy of the structural properties along the X-ray in-beam directions. For this reason, the anisotropic peak broadenings of the X-ray rocking curves (XRCs) were observed for various angle (phi) rotations for a-GaN films with and without SiNx interlayers. Analysis revealed the peak widths of the XRCs displayed an isotropic behavior for a nonpolar a-GaN bulk crystal. Thus, the in-plane anisotropy of the XRC peak widths for nonpolar a-GaN films apparently originates from the heteroepitaxial growth of the a-GaN layer on a foreign substrate. The lattice distortion analysis identified the presence of compressive strains in both the two in-plane directions (the c-and the m-axis), as well as a tensile strain along the normal growth direction. In addition, the observed frequency shifts in the Raman E-2 (high) mode for the a-GaN films showed the existence of considerable in-plane compressive strain on both a-GaN films, as confirmed by the lattice distortion analysis performed using the grazing-incidence XRD method. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | QUANTUM-WELLS | - |
dc.subject | GROWTH | - |
dc.title | Lattice Distortion Analysis of Nonpolar a-plane (11(2)over-bar0) GaN Films by Using a Grazing-Incidence X-Ray Diffraction Technique | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.3938/jkps.66.607 | - |
dc.identifier.scopusid | 2-s2.0-84924200399 | - |
dc.identifier.wosid | 000350893600012 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.66, no.4, pp.607 - 611 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 66 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 607 | - |
dc.citation.endPage | 611 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001965720 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | QUANTUM-WELLS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | Nonpolar | - |
dc.subject.keywordAuthor | a-plane | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | Anisotropy | - |
dc.subject.keywordAuthor | X-ray diffraction | - |
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