Lattice Distortion Analysis of Nonpolar a-plane (11(2)over-bar0) GaN Films by Using a Grazing-Incidence X-Ray Diffraction Technique
- Authors
- Seo, Yong Gon; Kim, Jihoon; Hwang, Sung-Min; Kim, Jihyun; Jang, Soohwan; Kim, Heesan; Baik, Kwang Hyeon
- Issue Date
- 2월-2015
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Nonpolar; a-plane; GaN; Anisotropy; X-ray diffraction
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.66, no.4, pp.607 - 611
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 66
- Number
- 4
- Start Page
- 607
- End Page
- 611
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/94595
- DOI
- 10.3938/jkps.66.607
- ISSN
- 0374-4884
- Abstract
- This work examines the anisotropic microstructure and the lattice distortions of nonpolar a-plane (11 (2) over bar0) GaN (a-GaN) films by using the grazing-incidence X-ray diffraction technique. Faulted a-GaN films typically exhibit an in-plane anisotropy of the structural properties along the X-ray in-beam directions. For this reason, the anisotropic peak broadenings of the X-ray rocking curves (XRCs) were observed for various angle (phi) rotations for a-GaN films with and without SiNx interlayers. Analysis revealed the peak widths of the XRCs displayed an isotropic behavior for a nonpolar a-GaN bulk crystal. Thus, the in-plane anisotropy of the XRC peak widths for nonpolar a-GaN films apparently originates from the heteroepitaxial growth of the a-GaN layer on a foreign substrate. The lattice distortion analysis identified the presence of compressive strains in both the two in-plane directions (the c-and the m-axis), as well as a tensile strain along the normal growth direction. In addition, the observed frequency shifts in the Raman E-2 (high) mode for the a-GaN films showed the existence of considerable in-plane compressive strain on both a-GaN films, as confirmed by the lattice distortion analysis performed using the grazing-incidence XRD method.
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