Anomalous high photoconductivity in short channel indium-zinc-oxide photo-transistors
DC Field | Value | Language |
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dc.contributor.author | Choi, Hyun-Sik | - |
dc.contributor.author | Jeon, Sanghun | - |
dc.date.accessioned | 2021-09-04T20:12:21Z | - |
dc.date.available | 2021-09-04T20:12:21Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2015-01-05 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/94659 | - |
dc.description.abstract | Upon light exposure, an indium-zinc-oxide (IZO) thin-film transistor (TFT) presents higher photoconductivity by several orders of magnitude at the negative gate bias region. Among various device geometrical factors, scaling down the channel length of the photo-transistor results in an anomalous increase in photoconductivity. To probe the origin of this high photoconductivity in short-channel device, we measured transient current, current-voltage, and capacitance-voltage characteristics of IZO-TFTs with various channel lengths and widths before and after illumination. Under the illumination, the equilibrium potential region which lies far from front interface exists only in short-channel devices, forming the un-depleted conducting back channel. This region plays an important role in carrier transport under the illumination, leading to high photoconductivity in short-channel devices. Photon exposure coupled with gate-modulated band bending for short-channel devices leads to the accumulation of V-o(++) at the front channel and screening negative gate bias, thereby generating high current flow in the un-depleted back-channel region. (C) 2015 AIP Publishing LLC. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | PERFORMANCE | - |
dc.title | Anomalous high photoconductivity in short channel indium-zinc-oxide photo-transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanghun | - |
dc.identifier.doi | 10.1063/1.4905310 | - |
dc.identifier.scopusid | 2-s2.0-84923763234 | - |
dc.identifier.wosid | 000347976900066 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.106, no.1 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 106 | - |
dc.citation.number | 1 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
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