Anomalous high photoconductivity in short channel indium-zinc-oxide photo-transistors
- Authors
- Choi, Hyun-Sik; Jeon, Sanghun
- Issue Date
- 5-1월-2015
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.106, no.1
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 106
- Number
- 1
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/94659
- DOI
- 10.1063/1.4905310
- ISSN
- 0003-6951
- Abstract
- Upon light exposure, an indium-zinc-oxide (IZO) thin-film transistor (TFT) presents higher photoconductivity by several orders of magnitude at the negative gate bias region. Among various device geometrical factors, scaling down the channel length of the photo-transistor results in an anomalous increase in photoconductivity. To probe the origin of this high photoconductivity in short-channel device, we measured transient current, current-voltage, and capacitance-voltage characteristics of IZO-TFTs with various channel lengths and widths before and after illumination. Under the illumination, the equilibrium potential region which lies far from front interface exists only in short-channel devices, forming the un-depleted conducting back channel. This region plays an important role in carrier transport under the illumination, leading to high photoconductivity in short-channel devices. Photon exposure coupled with gate-modulated band bending for short-channel devices leads to the accumulation of V-o(++) at the front channel and screening negative gate bias, thereby generating high current flow in the un-depleted back-channel region. (C) 2015 AIP Publishing LLC.
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Collections - College of Science and Technology > Display Convergence in Division of Display and Semiconductor Physics > 1. Journal Articles
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