Effects of oxygen doping concentration on resistive switching in NiN-based resistive switching memory

Abstract

In this study, NiN-based resistive switching (RS) random access memory was doped with various concentrations of oxygen, and its uniform set/reset operation and current levels were examined. As compared with undoped RS layers, RS layers deposited with an oxygen flow rate of 5 sccm were more uniform and exhibited higher on/off ratios by forming oxy-nitride. In contrast, RS layers deposited with oxygen flow rates less than 5 sccm showed poor performance due to oxygen acting as a defect. The authors demonstrated that the oxygen doping process can improve the RS characteristics of NiN films and help clarify the RS phenomena associated with these films. (C) 2014 American Vacuum Society.