Low-loss silicon waveguides with sidewall roughness reduction using a SiO2 hard mask and fluorine-based dry etching
DC Field | Value | Language |
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dc.contributor.author | Lee, Dong Ho | - |
dc.contributor.author | Choo, Sung Joong | - |
dc.contributor.author | Jung, Uiseok | - |
dc.contributor.author | Lee, Kyung Woon | - |
dc.contributor.author | Kim, Kwang Woong | - |
dc.contributor.author | Park, Jung Ho | - |
dc.date.accessioned | 2021-09-04T20:40:08Z | - |
dc.date.available | 2021-09-04T20:40:08Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2015-01 | - |
dc.identifier.issn | 0960-1317 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/94852 | - |
dc.description.abstract | High optical field confinement-possible silicon waveguides are used in various fields. The performance of a silicon waveguide depends on its sidewall roughness, which is responsible for scattering loss. The fabrication process for a silicon waveguide with a smooth sidewall for low loss was studied. The propagation loss of an optical silicon waveguide was reduced by using a SiO2 hard mask and reactive ion etching (RIE) with fluorine gases. The sidewall angle was controlled by Si etching with a SF6 and CF4 gas mixture. The thickness of the SiO2 hard mask affects the sidewall smoothing treatment. The roughness of the sidewall was reduced in the SiO2 etching process with a CF4 and O-2 gas mixture as the thickness of the SiO2 hard mask was increased. The minimum propagation loss (0.89 dB cm(-1)) of the fabricated silicon waveguide was achieved by using the fabrication method introduced in this paper. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | PLASMA | - |
dc.subject | CF4/O-2 | - |
dc.subject | DENSITY | - |
dc.title | Low-loss silicon waveguides with sidewall roughness reduction using a SiO2 hard mask and fluorine-based dry etching | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jung Ho | - |
dc.identifier.doi | 10.1088/0960-1317/25/1/015003 | - |
dc.identifier.scopusid | 2-s2.0-84920538274 | - |
dc.identifier.wosid | 000347340500004 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MICROMECHANICS AND MICROENGINEERING, v.25, no.1 | - |
dc.relation.isPartOf | JOURNAL OF MICROMECHANICS AND MICROENGINEERING | - |
dc.citation.title | JOURNAL OF MICROMECHANICS AND MICROENGINEERING | - |
dc.citation.volume | 25 | - |
dc.citation.number | 1 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PLASMA | - |
dc.subject.keywordPlus | CF4/O-2 | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordAuthor | silicon waveguide | - |
dc.subject.keywordAuthor | silicon-on-insulator | - |
dc.subject.keywordAuthor | SiO2 | - |
dc.subject.keywordAuthor | SF6 | - |
dc.subject.keywordAuthor | CF4 | - |
dc.subject.keywordAuthor | reactive ion etching | - |
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