Low-loss silicon waveguides with sidewall roughness reduction using a SiO2 hard mask and fluorine-based dry etching
- Authors
- Lee, Dong Ho; Choo, Sung Joong; Jung, Uiseok; Lee, Kyung Woon; Kim, Kwang Woong; Park, Jung Ho
- Issue Date
- 1월-2015
- Publisher
- IOP PUBLISHING LTD
- Keywords
- silicon waveguide; silicon-on-insulator; SiO2; SF6; CF4; reactive ion etching
- Citation
- JOURNAL OF MICROMECHANICS AND MICROENGINEERING, v.25, no.1
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF MICROMECHANICS AND MICROENGINEERING
- Volume
- 25
- Number
- 1
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/94852
- DOI
- 10.1088/0960-1317/25/1/015003
- ISSN
- 0960-1317
- Abstract
- High optical field confinement-possible silicon waveguides are used in various fields. The performance of a silicon waveguide depends on its sidewall roughness, which is responsible for scattering loss. The fabrication process for a silicon waveguide with a smooth sidewall for low loss was studied. The propagation loss of an optical silicon waveguide was reduced by using a SiO2 hard mask and reactive ion etching (RIE) with fluorine gases. The sidewall angle was controlled by Si etching with a SF6 and CF4 gas mixture. The thickness of the SiO2 hard mask affects the sidewall smoothing treatment. The roughness of the sidewall was reduced in the SiO2 etching process with a CF4 and O-2 gas mixture as the thickness of the SiO2 hard mask was increased. The minimum propagation loss (0.89 dB cm(-1)) of the fabricated silicon waveguide was achieved by using the fabrication method introduced in this paper.
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