Independent chemical/physical role of combustive exothermic heat in solution-processed metal oxide semiconductors for thin-film transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seong Jip | - |
dc.contributor.author | Song, Ae Ran | - |
dc.contributor.author | Lee, Sun Sook | - |
dc.contributor.author | Nahm, Sahn | - |
dc.contributor.author | Choi, Youngmin | - |
dc.contributor.author | Chung, Kwun-Bum | - |
dc.contributor.author | Jeong, Sunho | - |
dc.date.accessioned | 2021-09-05T01:23:38Z | - |
dc.date.available | 2021-09-05T01:23:38Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2015 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/96411 | - |
dc.description.abstract | The development of high performance, solution-processed metal-oxide semiconductors has been of paramount interest in various fields of electronic applications. Among the variety of methodologies for synthesizing solution-processed precursor solutions, the combustion chemistry reaction, which involves an internal exothermic heat reaction, has drawn a tremendous amount of attraction as one of the most viable chemical approaches. In this paper, we report the synthesis of new zinc-tin oxide (ZTO) precursor solutions that can be used to independently adjust the amount of combustive exothermic heat. Through comparative analyses based on X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and X-ray absorption spectroscopy, the independent influence of combustive heat is elucidated in indium-free, solution-processed oxide semiconductors, in conjunction with an interpretation of observed variations in the device performance. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | LOW-TEMPERATURE FABRICATION | - |
dc.subject | BAND-EDGE STATES | - |
dc.subject | HIGH-PERFORMANCE | - |
dc.subject | DOPED ZNO | - |
dc.subject | SOL-GEL | - |
dc.subject | MOBILITY | - |
dc.title | Independent chemical/physical role of combustive exothermic heat in solution-processed metal oxide semiconductors for thin-film transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Nahm, Sahn | - |
dc.identifier.doi | 10.1039/c4tc02408g | - |
dc.identifier.scopusid | 2-s2.0-84927749667 | - |
dc.identifier.wosid | 000349756800004 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.3, no.7, pp.1457 - 1462 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 3 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1457 | - |
dc.citation.endPage | 1462 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LOW-TEMPERATURE FABRICATION | - |
dc.subject.keywordPlus | BAND-EDGE STATES | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | DOPED ZNO | - |
dc.subject.keywordPlus | SOL-GEL | - |
dc.subject.keywordPlus | MOBILITY | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.