Independent chemical/physical role of combustive exothermic heat in solution-processed metal oxide semiconductors for thin-film transistors
- Authors
- Kim, Seong Jip; Song, Ae Ran; Lee, Sun Sook; Nahm, Sahn; Choi, Youngmin; Chung, Kwun-Bum; Jeong, Sunho
- Issue Date
- 2015
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- JOURNAL OF MATERIALS CHEMISTRY C, v.3, no.7, pp.1457 - 1462
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF MATERIALS CHEMISTRY C
- Volume
- 3
- Number
- 7
- Start Page
- 1457
- End Page
- 1462
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/96411
- DOI
- 10.1039/c4tc02408g
- ISSN
- 2050-7526
- Abstract
- The development of high performance, solution-processed metal-oxide semiconductors has been of paramount interest in various fields of electronic applications. Among the variety of methodologies for synthesizing solution-processed precursor solutions, the combustion chemistry reaction, which involves an internal exothermic heat reaction, has drawn a tremendous amount of attraction as one of the most viable chemical approaches. In this paper, we report the synthesis of new zinc-tin oxide (ZTO) precursor solutions that can be used to independently adjust the amount of combustive exothermic heat. Through comparative analyses based on X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and X-ray absorption spectroscopy, the independent influence of combustive heat is elucidated in indium-free, solution-processed oxide semiconductors, in conjunction with an interpretation of observed variations in the device performance.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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