Etching Characteristics and Mechanism of SINx Films for Nano-Devices in CH2F2/O-2/Ar Inductively Coupled Plasma: Effect of O-2 Mixing Ratio
- Authors
- Son, Jinyoung; Efremov, Alexander; Yun, Sun Jin; Yeom, Geun Young; Kwon, Kwang-Ho
- Issue Date
- 12월-2014
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Low-Temperature SiNix; CH2F2 Plasma; Etching Mechanism; Polymerization
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.12, pp.9534 - 9540
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 14
- Number
- 12
- Start Page
- 9534
- End Page
- 9540
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/96629
- DOI
- 10.1166/jnn.2014.10182
- ISSN
- 1533-4880
- Abstract
- Etching characteristics and mechanisms of low-temperature SINx thin films for nano-devices in CH2F2/O-2/Ar inductively-coupled plasmas were studied. The etching rates of SINx thin films as well as the etching selectivities over Si and photoresist were measured in the range of 25-75% O-2 in a feed gas at fixed CH2F2 content (25%), gas pressure (6 mTorr), input power (900 W), bias power (200 W), and total gas flow rate (40 sccm). Plasma parameters were analyzed using the Langmuir probe diagnostics and optical emission spectroscopy. The chemical states of the etched surfaces were examined by the X-ray photoelectron spectroscopy. It was found that the non-monotonic (with a maximum at about 50-60% O-2) SINx etching rate does not correlate with monotonically decreasing F atom flux and ion energy flux. It was proposed that, under the given set of experimental conditions, the SiN, etching process is also controlled by the O and H atom fluxes through the destruction of the fluorocarbon polymer layer.
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Collections - Graduate School > Department of Control and Instrumentation Engineering > 1. Journal Articles
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