The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances
DC Field | Value | Language |
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dc.contributor.author | Kim, Jeong-Kyu | - |
dc.contributor.author | Kim, Gwang-Sik | - |
dc.contributor.author | Nam, Hyohyun | - |
dc.contributor.author | Shin, Changhwan | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.contributor.author | Kim, Jong-Kook | - |
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Saraswat, Krishna C. | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.date.accessioned | 2021-09-05T02:33:45Z | - |
dc.date.available | 2021-09-05T02:33:45Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-12 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/96653 | - |
dc.description.abstract | We investigate the impact of metal-interfacial layer-semiconductor source/drain (M-I-S S/D) structure with heavily doped n-type interfacial layer (n(+)-IL) or with undoped IL on sub-10-nm n-type germanium (Ge) FinFET device performance using 3-D TCAD simulations. Compared to the metal-semiconductor S/D structure, the M-I-S S/D structures provide much lower contact resistivity. Especially, theM-I-S S/D structure with n(+)-IL provides much lower contact resistivity, resulting in similar to 5x lower contact resistivity than 1x10(-8) Omega-cm(2), specified in International Technology Roadmap for Semiconductors. In addition, we found that the M-I-S structure with n(+)-IL remarkably suppresses the sensitivity of contact resistivity to S/D doping concentration. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | GERMANIDE | - |
dc.title | The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jong-Kook | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1109/LED.2014.2364574 | - |
dc.identifier.scopusid | 2-s2.0-84913597110 | - |
dc.identifier.wosid | 000345575400008 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.35, no.12, pp.1185 - 1187 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 35 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1185 | - |
dc.citation.endPage | 1187 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | GERMANIDE | - |
dc.subject.keywordAuthor | CMOS | - |
dc.subject.keywordAuthor | contact resistance | - |
dc.subject.keywordAuthor | FinFET | - |
dc.subject.keywordAuthor | germanium | - |
dc.subject.keywordAuthor | interfacial layer | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | source/drain | - |
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