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Origin of High Photoconductive Gain in Fully Transparent Heterojunction Nanocrystalline Oxide Image Sensors and Interconnects

Authors
Jeon, SanghunSong, IhunLee, SungsikRyu, ByungkiAhn, Seung-EonLee, EunhaKim, YoungNathan, ArokiaRobertson, JohnChung, U-In
Issue Date
5-11월-2014
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED MATERIALS, v.26, no.41, pp.7102 - +
Indexed
SCIE
SCOPUS
Journal Title
ADVANCED MATERIALS
Volume
26
Number
41
Start Page
7102
End Page
+
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/96796
DOI
10.1002/adma.201401955
ISSN
0935-9648
Abstract
A technique for invisible image capture using a photosensor array based on transparent conducting oxide semiconductor thin-film transistors and transparent interconnection technologies is presented. A transparent conducting layer is employed for the sensor electrodes as well as interconnection in the array, providing about 80% transmittance at visible-light wavelengths. The phototransistor is a Hf-In-Zn-O/In-Zn-O heterostructure yielding a high quantum-efficiency in the visible range.
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College of Science and Technology > Display Convergence in Division of Display and Semiconductor Physics > 1. Journal Articles

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