Etching characteristics and mechanisms of Mo thin films in Cl-2/Ar and CF4/Ar inductively coupled plasmas
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, Nomin | - |
dc.contributor.author | Efremov, Alexander | - |
dc.contributor.author | Yeom, Geun Young | - |
dc.contributor.author | Choi, Bok-Gil | - |
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.date.accessioned | 2021-09-05T03:27:04Z | - |
dc.date.available | 2021-09-05T03:27:04Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-11 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/96912 | - |
dc.description.abstract | The etching characteristics and mechanism of Mo thin films in Cl-2/Ar and CF4/Ar inductively coupled plasmas under the same operating conditions (pressure, 6 mTorr; input power, 700W; bias power, 200W) were investigated. For both gas mixtures, an increase in the Ar fraction or gas pressure at a fixed gas mixing ratio was found to cause a non-monotonic change in the Mo etching rates. The X-ray photoelectron spectroscopy (XPS) diagnostics indicated contamination of the etched surfaces by reaction products. The Cl-2/Ar and CF4/Ar plasma parameters were also investigated using a combination of a zero-dimensional plasma model and plasma diagnostics using Langmuir probes. An analysis of the etching kinetics with the model-predicted fluxes of the plasma active species suggests that: 1) the Mo etching process occurs in the transitional regime of the ion-assisted chemical reaction, and 2) the non-monotonic Mo etching rate is probably associated with opposing changes in the fluxes; of the reactive neutral species and ion energy. (C) 2014 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | HIGH-DENSITY | - |
dc.subject | GLOBAL-MODEL | - |
dc.subject | POLYSILICON | - |
dc.subject | DISCHARGES | - |
dc.subject | EVOLUTION | - |
dc.subject | PRODUCTS | - |
dc.subject | KINETICS | - |
dc.subject | SILICON | - |
dc.subject | RATIO | - |
dc.subject | AR | - |
dc.title | Etching characteristics and mechanisms of Mo thin films in Cl-2/Ar and CF4/Ar inductively coupled plasmas | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.7567/JJAP.53.116201 | - |
dc.identifier.scopusid | 2-s2.0-84909981682 | - |
dc.identifier.wosid | 000346462200051 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.11 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 53 | - |
dc.citation.number | 11 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HIGH-DENSITY | - |
dc.subject.keywordPlus | GLOBAL-MODEL | - |
dc.subject.keywordPlus | POLYSILICON | - |
dc.subject.keywordPlus | DISCHARGES | - |
dc.subject.keywordPlus | EVOLUTION | - |
dc.subject.keywordPlus | PRODUCTS | - |
dc.subject.keywordPlus | KINETICS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | RATIO | - |
dc.subject.keywordPlus | AR | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.