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Improved performance of Ga2O3/ITO-based transparent conductive oxide films using hydrogen annealing for near-ultraviolet light-emitting diodes
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Sukwon | - |
| dc.contributor.author | Kim, Su Jin | - |
| dc.contributor.author | Kim, Kyeong Heon | - |
| dc.contributor.author | Kim, Hee-dong | - |
| dc.contributor.author | Kim, Tae Geun | - |
| dc.date.accessioned | 2021-09-05T03:34:37Z | - |
| dc.date.available | 2021-09-05T03:34:37Z | - |
| dc.date.created | 2021-06-15 | - |
| dc.date.issued | 2014-11 | - |
| dc.identifier.issn | 1862-6300 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/96969 | - |
| dc.description.abstract | We investigated the use of transparent conductive oxide for near-ultraviolet light-emitting diodes based on co-sputtered gallium oxide (Ga2O3) and indium tin oxide (ITO). The electrical and optical properties of Ga2O3/ITO (IGTO) were observed to improve through hydrogen annealing, which resulted in a sheet resistance of 164/ and an optical transmittance of 94% at increased carrier concentration and crystallization of the co-sputtered film through hydrogen annealing. Moreover, ohmic-like contacts were formed on the p-GaN substrate with a specific contact resistance of 3.9x10(-1)cm(2). | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | WILEY-V C H VERLAG GMBH | - |
| dc.title | Improved performance of Ga2O3/ITO-based transparent conductive oxide films using hydrogen annealing for near-ultraviolet light-emitting diodes | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
| dc.identifier.doi | 10.1002/pssa.201431278 | - |
| dc.identifier.scopusid | 2-s2.0-84927161856 | - |
| dc.identifier.wosid | 000344461800023 | - |
| dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.211, no.11, pp.2569 - 2573 | - |
| dc.relation.isPartOf | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
| dc.citation.title | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
| dc.citation.volume | 211 | - |
| dc.citation.number | 11 | - |
| dc.citation.startPage | 2569 | - |
| dc.citation.endPage | 2573 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordAuthor | co-sputtering | - |
| dc.subject.keywordAuthor | Ga2O3 | - |
| dc.subject.keywordAuthor | hydrogen annealing | - |
| dc.subject.keywordAuthor | IGTO | - |
| dc.subject.keywordAuthor | transparent conductive oxides | - |
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