Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition
DC Field | Value | Language |
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dc.contributor.author | Chung, Ho Young | - |
dc.contributor.author | Kim, Su Jin | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-05T03:34:45Z | - |
dc.date.available | 2021-09-05T03:34:45Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-11 | - |
dc.identifier.issn | 0749-6036 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/96970 | - |
dc.description.abstract | In this study, AlGaN electron blocking layers (EBLs) with graded Al compositions have been numerically investigated to improve hole injection and electron confinement in InGaN/GaN-based light-emitting diodes (LEDs). Compared to LEDs with reference structure the output power of the proposed LEDs with decreasing/increasing (V-shaped) grading of the Al composition along the EBL growth direction was increased by a factor of similar to 2.5, whereas the efficiency droop at high currents was greatly reduced. In addition, the forward voltage was reduced from 3.69 V to 3.42 V at 20 mA. These results indicate that well-designed EBLs using a V-shaped graded Al composition can enhance hole injection and electron confinement by reducing the polarization effect in these devices. (C) 2014 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | - |
dc.subject | QUANTUM EFFICIENCY | - |
dc.subject | HOLE-INJECTION | - |
dc.subject | ADVANTAGES | - |
dc.subject | DROOP | - |
dc.subject | LEDS | - |
dc.title | Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1016/j.spmi.2014.07.046 | - |
dc.identifier.scopusid | 2-s2.0-84906734743 | - |
dc.identifier.wosid | 000347017100041 | - |
dc.identifier.bibliographicCitation | SUPERLATTICES AND MICROSTRUCTURES, v.75, pp.390 - 397 | - |
dc.relation.isPartOf | SUPERLATTICES AND MICROSTRUCTURES | - |
dc.citation.title | SUPERLATTICES AND MICROSTRUCTURES | - |
dc.citation.volume | 75 | - |
dc.citation.startPage | 390 | - |
dc.citation.endPage | 397 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | QUANTUM EFFICIENCY | - |
dc.subject.keywordPlus | HOLE-INJECTION | - |
dc.subject.keywordPlus | ADVANTAGES | - |
dc.subject.keywordPlus | DROOP | - |
dc.subject.keywordPlus | LEDS | - |
dc.subject.keywordAuthor | Electron blocking layer | - |
dc.subject.keywordAuthor | Light-emitting diodes | - |
dc.subject.keywordAuthor | Efficiency droop | - |
dc.subject.keywordAuthor | Numerical simulation | - |
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