Electrical characteristics of flexible ZnO thin-film transistors annealed by microwave irradiation
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Sukhyung | - |
dc.contributor.author | Cho, Kyoungah | - |
dc.contributor.author | Yang, Kyungwhan | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-05T03:36:28Z | - |
dc.date.available | 2021-09-05T03:36:28Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-11 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/96982 | - |
dc.description.abstract | This study examines the effect of microwave annealing upon the electrical characteristics of a representative ZnO thin-film transistor (TFT) deposited on a flexible plastic substrate. After microwave irradiation, the mobility of the TFT is increased from 0.2 to 1.5 cm(2)/(V s) and its on/off ratio increases from 36.5 to 6.9 x 10(6). The photoluminescence study reveals that the concentration of oxygen vacancies increases remarkably when the ZnO thin films are exposed to microwave radiation. In this paper, in addition to the results mentioned above, the correlation between the photoluminescence and electrical characteristics is discussed and the electrical characteristics of the ZnO TFT under strain are analyzed. (C) 2014 American Vacuum Society. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | TEMPERATURE | - |
dc.subject | MOBILITY | - |
dc.subject | ORIGIN | - |
dc.subject | OXIDE | - |
dc.title | Electrical characteristics of flexible ZnO thin-film transistors annealed by microwave irradiation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cho, Kyoungah | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1116/1.4898115 | - |
dc.identifier.scopusid | 2-s2.0-84929990140 | - |
dc.identifier.wosid | 000345512800080 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.32, no.6 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 32 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | ORIGIN | - |
dc.subject.keywordPlus | OXIDE | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.