Resistive Switching Characteristics of HfO2-Based Memory Devices on Flexible Plastics
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Yong | - |
dc.contributor.author | Cho, Kyoungah | - |
dc.contributor.author | Park, Sukhyung | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-05T03:38:54Z | - |
dc.date.available | 2021-09-05T03:38:54Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-11 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/97000 | - |
dc.description.abstract | In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 10(4) and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | NONVOLATILE MEMORY | - |
dc.subject | HAFNIUM OXIDE | - |
dc.subject | FILMS | - |
dc.subject | TIOX | - |
dc.title | Resistive Switching Characteristics of HfO2-Based Memory Devices on Flexible Plastics | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1166/jnn.2014.9879 | - |
dc.identifier.scopusid | 2-s2.0-84908439536 | - |
dc.identifier.wosid | 000344126500014 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.11, pp.8191 - 8195 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 14 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 8191 | - |
dc.citation.endPage | 8195 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY | - |
dc.subject.keywordPlus | HAFNIUM OXIDE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | TIOX | - |
dc.subject.keywordAuthor | Resistive Switching Memory | - |
dc.subject.keywordAuthor | Oxide | - |
dc.subject.keywordAuthor | Flexible Device | - |
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