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Enhanced Ethanol Sensing Characteristics of In2O3-Decorated NiO Hollow Nanostructures via Modulation of Hole Accumulation Layers

Authors
Kim, Hyo-JoongJeong, Hyun-MookKim, Tae-HyungChung, Jae-HoKang, Yun ChanLee, Jong-Heun
Issue Date
22-Oct-2014
Publisher
AMER CHEMICAL SOC
Keywords
gas sensor; hetero p-n junction; In2O3; sensitivity; recovery
Citation
ACS APPLIED MATERIALS & INTERFACES, v.6, no.20, pp.18197 - 18204
Indexed
SCIE
SCOPUS
Journal Title
ACS APPLIED MATERIALS & INTERFACES
Volume
6
Number
20
Start Page
18197
End Page
18204
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/97062
DOI
10.1021/am5051923
ISSN
1944-8244
Abstract
In this work, we report a dramatic enhancement in ethanol sensing characteristics of NiO hollow nanostructures via decoration with In2O3 nanoclusters. The pure NiO and 1.64-4.41 atom % In-doped NiO and In2O3-decorated NiO hollow spheres were prepared by ultrasonic spray pyrolysis, and their gas sensing characteristics were investigated. The response (the ratio between the resistance in gas and air) of the In2O3-decorated NiO hollow spheres to 5 ppm ethanol (C2H5OH) was 9.76 at 350 degrees C, which represents a significant improvement over the In-doped NiO and pure NiO hollow spheres (3.37 and 2.18, respectively). Furthermore, the 90% recovery time was drastically reduced from 1880 to 23 s, and a selective detection of ethanol with negligible cross-response to other gases was achieved. The enhanced gas response and fast recovery kinetics were explained in relation to the thinning of the near-surface hole accumulation layer of p-type NiO underneath n-type In2O3, the change of charge carrier concentration, and the variation of oxygen adsorption.
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