Morphological stability of Ag reflector for high-power GaN-based vertical light-emitting diode by addition of Ni layer
DC Field | Value | Language |
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dc.contributor.author | Choi, Young-Yun | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-05T05:44:14Z | - |
dc.date.available | 2021-09-05T05:44:14Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-09 | - |
dc.identifier.issn | 0749-6036 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/97542 | - |
dc.description.abstract | We investigated the reasons why Ag reflectors in vertical light-emitting diodes showed much better morphological stability with the addition of an intermediate Ni layer by means of X-ray pole figures, scanning electron microscopy (SEM), and SEM electron backscatter diffraction (EBSD) techniques. The SEM results showed that, unlike the pitted Ag-only contacts, the Ni-combined Ag contacts annealed at 300 degrees C contained only hillocks, even after annealing for 60 min. The EBSD results demonstrated that the Ag-only samples were more strongly < 111 >-textured than the Ni-combined Ag samples after annealing for 60 min. The pole-figure results also indicated that, for both the samples, the {111} texture was enhanced by annealing, although the Ag-only samples were more highly < 111 >-textured than the Ni-combined Ag samples. On the basis of the SEM, EBSD, and pole-figure results, we interpret and discuss the possible mechanisms underlying the improved morphological stability of the Ni-combined Ag reflectors. (C) 2014 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | - |
dc.subject | P-TYPE GAN | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | ALLOY | - |
dc.subject | AGGLOMERATION | - |
dc.subject | RESISTANCE | - |
dc.subject | GROWTH | - |
dc.subject | PERFORMANCE | - |
dc.subject | FABRICATION | - |
dc.subject | SILVER | - |
dc.subject | FILMS | - |
dc.title | Morphological stability of Ag reflector for high-power GaN-based vertical light-emitting diode by addition of Ni layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1016/j.spmi.2014.06.007 | - |
dc.identifier.scopusid | 2-s2.0-84903943675 | - |
dc.identifier.wosid | 000341554500034 | - |
dc.identifier.bibliographicCitation | SUPERLATTICES AND MICROSTRUCTURES, v.73, pp.342 - 349 | - |
dc.relation.isPartOf | SUPERLATTICES AND MICROSTRUCTURES | - |
dc.citation.title | SUPERLATTICES AND MICROSTRUCTURES | - |
dc.citation.volume | 73 | - |
dc.citation.startPage | 342 | - |
dc.citation.endPage | 349 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | ALLOY | - |
dc.subject.keywordPlus | AGGLOMERATION | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | SILVER | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | Ag reflector | - |
dc.subject.keywordAuthor | X-ray pole figure | - |
dc.subject.keywordAuthor | Electron backscatter diffraction | - |
dc.subject.keywordAuthor | LED | - |
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