Morphological stability of Ag reflector for high-power GaN-based vertical light-emitting diode by addition of Ni layer
- Authors
- Choi, Young-Yun; Seong, Tae-Yeon
- Issue Date
- 9월-2014
- Publisher
- ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
- Keywords
- Ag reflector; X-ray pole figure; Electron backscatter diffraction; LED
- Citation
- SUPERLATTICES AND MICROSTRUCTURES, v.73, pp.342 - 349
- Indexed
- SCIE
SCOPUS
- Journal Title
- SUPERLATTICES AND MICROSTRUCTURES
- Volume
- 73
- Start Page
- 342
- End Page
- 349
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/97542
- DOI
- 10.1016/j.spmi.2014.06.007
- ISSN
- 0749-6036
- Abstract
- We investigated the reasons why Ag reflectors in vertical light-emitting diodes showed much better morphological stability with the addition of an intermediate Ni layer by means of X-ray pole figures, scanning electron microscopy (SEM), and SEM electron backscatter diffraction (EBSD) techniques. The SEM results showed that, unlike the pitted Ag-only contacts, the Ni-combined Ag contacts annealed at 300 degrees C contained only hillocks, even after annealing for 60 min. The EBSD results demonstrated that the Ag-only samples were more strongly < 111 >-textured than the Ni-combined Ag samples after annealing for 60 min. The pole-figure results also indicated that, for both the samples, the {111} texture was enhanced by annealing, although the Ag-only samples were more highly < 111 >-textured than the Ni-combined Ag samples. On the basis of the SEM, EBSD, and pole-figure results, we interpret and discuss the possible mechanisms underlying the improved morphological stability of the Ni-combined Ag reflectors. (C) 2014 Elsevier Ltd. All rights reserved.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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