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Heterostructures based on inorganic and organic van der Waals systems

Authors
Lee, Gwan-HyoungLee, Chul-Hovan der Zande, Arend M.Han, MinyongCui, XuArefe, GhidewonNuckolls, ColinHeinz, Tony F.Hone, JamesKim, Philip
Issue Date
9월-2014
Publisher
AMER INST PHYSICS
Citation
APL MATERIALS, v.2, no.9
Indexed
SCIE
SCOPUS
Journal Title
APL MATERIALS
Volume
2
Number
9
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/97566
DOI
10.1063/1.4894435
ISSN
2166-532X
Abstract
The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organicinorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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Graduate School > KU-KIST Graduate School of Converging Science and Technology > 1. Journal Articles

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