Vertical stacking of ZnO nanowire devices with different functionalities on plastic substrates
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Youngin | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-05T06:36:07Z | - |
dc.date.available | 2021-09-05T06:36:07Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-08 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/97880 | - |
dc.description.abstract | In this paper, we demonstrate the vertical stacking of ZnO nanowire (NW) field-effect transistors (FETs), a ZnO NW-based nanofloating gate memory (NFGM) device, and a ZnO NW-based inverter on a flexible plastic substrate. For the vertical stacking, four ZnO NW devices are sequentially constructed on each of four layers, and these devices are isolated from each other using Al2O3 material. Each of the stacked ZnO NW devices exhibits the good electrical characteristics with n-type depletion modes under both the flat and bent states. Moreover, the switching, memory, and inverting characteristics of the stacked ZnO NW devices are examined. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | FLOATING-GATE MEMORY | - |
dc.subject | BULK WAFERS | - |
dc.subject | FABRICATION | - |
dc.subject | CIRCUITS | - |
dc.subject | CHANNELS | - |
dc.subject | RIBBONS | - |
dc.title | Vertical stacking of ZnO nanowire devices with different functionalities on plastic substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1002/pssa.201330555 | - |
dc.identifier.wosid | 000340521000044 | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.211, no.8, pp.1928 - 1932 | - |
dc.relation.isPartOf | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.title | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.volume | 211 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1928 | - |
dc.citation.endPage | 1932 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | FLOATING-GATE MEMORY | - |
dc.subject.keywordPlus | BULK WAFERS | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | CHANNELS | - |
dc.subject.keywordPlus | RIBBONS | - |
dc.subject.keywordAuthor | field-effect transistors | - |
dc.subject.keywordAuthor | multilayers | - |
dc.subject.keywordAuthor | nanowires | - |
dc.subject.keywordAuthor | plastics | - |
dc.subject.keywordAuthor | substrates | - |
dc.subject.keywordAuthor | ZnO | - |
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