Effect of a ga-doped ZnO thin film with a ZTO buffer layer fabricated by using pulsed DC magnetron sputter for dye-sensitized solar cells
- Authors
- Song, Sang-Woo; Lee, Kyung-Ju; Roh, Ji-Hyung; Park, On-Jeon; Kim, Hwan-Sun; Moon, Byung-Moo; Ji, Min-Woo
- Issue Date
- Aug-2014
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- GZO; Dye-sensitized solar cell; TCO
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.65, no.3, pp.308 - 311
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 65
- Number
- 3
- Start Page
- 308
- End Page
- 311
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/97896
- DOI
- 10.3938/jkps.65.308
- ISSN
- 0374-4884
- Abstract
- The electrical property of a Ga-doped ZnO(GZO) thin film is well known to be similar that of commercialized fluorine-doped tin oxide(FTO). However GZO is limited for use at high process temperatures for solar cells because of its unstable resistivity at temperatures above 300 A degrees C. A GZO thin film compared to zinc tin oxide(ZTO)-GZO multilayer can be used at high process temperatures. A GZO thin film was deposited on glass by using pulsed DC magnetron sputter. Then, a ZTO buffer layer was deposited on the GZO surface. During the deposition, the working pressure was 5 mTorr (Z-1 glass) and 1 mTorr (Z-2 glass). Dye-sensitized solar cells (DSSCs) were fabricated using Z-1, Z-2 and commercialized FTO glasses. Z-2 showed a conversion efficiency of 4.265%, which was enhanced by 0.399% compared to that of the DSSCs using FTO(3.784%). The conversion efficiency for Z-1 (3.889%) was a little higher than that of FTO. Thus, the ZTO-GZO electrode showed better characteristics than those obtained using the FTO electrode, which can be attributed to the reduced charge recombination and series resistance.
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