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Gate-Controlled Spin-Orbit Coupling in InAs/InGaAs Quantum Well Structures
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Kyung-Ho | - |
| dc.contributor.author | Park, Youn Ho | - |
| dc.contributor.author | Koo, Hyun Cheol | - |
| dc.contributor.author | Chang, Joonyeon | - |
| dc.contributor.author | Kim, Young Keun | - |
| dc.contributor.author | Kim, Hyung-jun | - |
| dc.date.accessioned | 2021-09-05T07:12:24Z | - |
| dc.date.available | 2021-09-05T07:12:24Z | - |
| dc.date.created | 2021-06-15 | - |
| dc.date.issued | 2014-07 | - |
| dc.identifier.issn | 1533-4880 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/98017 | - |
| dc.description.abstract | We have investigated gate electric field controlled Rashba spin-orbit coupling (SOC) constant (alpha) in In0.53Ga0.47As and InAs-inserted quantum well (QW) structures. More than three times larger gate controllability of alpha in the InAs-inserted QW has been observed compared to the In0.53Ga0.47As QW. The enhanced gate controllability of alpha directly results from the larger zero-field SOC in narrow band gap InAs QW. Furthermore, the lower contact resistance and higher electron mobility imply that the InAs QW is a more promising channel for spintronic device applications. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
| dc.subject | CHANNEL | - |
| dc.subject | FIELD | - |
| dc.title | Gate-Controlled Spin-Orbit Coupling in InAs/InGaAs Quantum Well Structures | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Koo, Hyun Cheol | - |
| dc.contributor.affiliatedAuthor | Kim, Young Keun | - |
| dc.identifier.doi | 10.1166/jnn.2014.8464 | - |
| dc.identifier.scopusid | 2-s2.0-84903836814 | - |
| dc.identifier.wosid | 000332926400064 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.7, pp.5212 - 5215 | - |
| dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
| dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
| dc.citation.volume | 14 | - |
| dc.citation.number | 7 | - |
| dc.citation.startPage | 5212 | - |
| dc.citation.endPage | 5215 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | CHANNEL | - |
| dc.subject.keywordPlus | FIELD | - |
| dc.subject.keywordAuthor | Rashba Effect | - |
| dc.subject.keywordAuthor | Spin-Orbit Coupling | - |
| dc.subject.keywordAuthor | Quantum Well | - |
| dc.subject.keywordAuthor | Spin-Field Effect Transistor | - |
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