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Gate-Controlled Spin-Orbit Coupling in InAs/InGaAs Quantum Well Structures
- Authors
- Kim, Kyung-Ho; Park, Youn Ho; Koo, Hyun Cheol; Chang, Joonyeon; Kim, Young Keun; Kim, Hyung-jun
- Issue Date
- 7월-2014
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Rashba Effect; Spin-Orbit Coupling; Quantum Well; Spin-Field Effect Transistor
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.7, pp.5212 - 5215
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 14
- Number
- 7
- Start Page
- 5212
- End Page
- 5215
- ISSN
- 1533-4880
- Abstract
- We have investigated gate electric field controlled Rashba spin-orbit coupling (SOC) constant (alpha) in In0.53Ga0.47As and InAs-inserted quantum well (QW) structures. More than three times larger gate controllability of alpha in the InAs-inserted QW has been observed compared to the In0.53Ga0.47As QW. The enhanced gate controllability of alpha directly results from the larger zero-field SOC in narrow band gap InAs QW. Furthermore, the lower contact resistance and higher electron mobility imply that the InAs QW is a more promising channel for spintronic device applications.
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