Separation of surface accumulation and bulk neutral channel in junctionless transistors
DC Field | Value | Language |
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dc.contributor.author | Jeon, Dae-Young | - |
dc.contributor.author | Park, So Jeong | - |
dc.contributor.author | Mouis, Mireille | - |
dc.contributor.author | Joo, Min-Kyu | - |
dc.contributor.author | Barraud, Sylvain | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.contributor.author | Ghibaudo, Gerard | - |
dc.date.accessioned | 2021-09-05T07:36:22Z | - |
dc.date.available | 2021-09-05T07:36:22Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-06-30 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/98188 | - |
dc.description.abstract | The error rate of low-field mobility (mu(0)) extracted from the conventional Y-function method in junctionless transistors (JLTs) is found to be linearly proportional to the channel doping concentration (N-d) for a typical value of the first order mobility attenuation factor theta(0) approximate to 0.1 V-1. Therefore, for a better understanding of their physical operation with higher accuracy, a methodology for the extraction of the low-field mobility of the surface accumulation channel (mu(0_acc)) and the bulk neutral channel mobility (mu(bulk)) of JLTs is proposed based on their unique operation principle. Interestingly, it is found that the different temperature dependence between mu(0_acc) and mu(bulk) is also confirming that the distribution of point defects along the channel in the heavily doped Si channel of JLTs was non-uniform. (C) 2014 AIP Publishing LLC. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | EXTRACTION | - |
dc.title | Separation of surface accumulation and bulk neutral channel in junctionless transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Gyu-Tae | - |
dc.identifier.doi | 10.1063/1.4886139 | - |
dc.identifier.scopusid | 2-s2.0-84905668721 | - |
dc.identifier.wosid | 000339114100069 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.104, no.26 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 104 | - |
dc.citation.number | 26 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | EXTRACTION | - |
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