Carbon- and Oxygen-Free Cu(InGa)(SSe)(2) Solar Cell with a 4.63% Conversion Efficiency by Electrostatic Spray Deposition
- Authors
- Yoon, Hyun; Na, Seung Heon; Choi, Jae Young; Kim, Min Woo; Kim, Hayong; An, Hee Sang; Min, Byoung Koun; Ahn, SeJin; Yun, Jae Ho; Gwak, Jihye; Yoon, KyungHoon; Kolekar, Sanjay S.; van Hest, Maikel F. A. M.; Al-Deyab, Salem S.; Swihart, Mark T.; Yoon, Sam S.
- Issue Date
- 11-6월-2014
- Publisher
- AMER CHEMICAL SOC
- Keywords
- CIGSSe; thin film; solar cell; electrostatic spray; carbon free; oxygen free
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.6, no.11, pp.8369 - 8377
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 6
- Number
- 11
- Start Page
- 8369
- End Page
- 8377
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/98238
- DOI
- 10.1021/am501286d
- ISSN
- 1944-8244
- Abstract
- We have demonstrated the first example of carbon- and oxygen-free Cu(In,Ga)(SSe)(2) (CIGSSe) absorber layers prepared by electrospraying a CuInGa (CIG) precursor followed by annealing, sulfurization, and selenization at elevated temperature. X-ray diffraction and scanning electron microscopy showed that the amorphous as-deposited (CIG) precursor film was converted into polycrystalline CIGSSe with a flat-grained morphology after post-treatment. The optimal post-treatment temperature was 300 degrees C for annealing and 500 degrees C for both sulfurization and selenization, with a ramp rate of 5 degrees C/min. The carbon impurities in the precursor film were removed by air annealing, and oxide that was formed during annealing was removed by sulfurization. The fabricated CIGSSe solar cell showed a conversion efficiency of 4.63% for a 0.44 cm(2) area, with V-oc = 0.4 V, J(sc) = 21 mA/cm(2), and FF = 0.53.
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Collections - College of Engineering > Department of Mechanical Engineering > 1. Journal Articles
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