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Formation of a bcc (001)-textured CoFe layer by the insertion of an FeZr layer in multilayer-based stacks with perpendicular magnetic anisotropy

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dc.contributor.authorLee, Tae Young-
dc.contributor.authorWon, Young Chan-
dc.contributor.authorLim, Sang Ho-
dc.contributor.authorLee, Seong-Rae-
dc.date.accessioned2021-09-05T08:35:13Z-
dc.date.available2021-09-05T08:35:13Z-
dc.date.created2021-06-15-
dc.date.issued2014-06-
dc.identifier.issn1882-0778-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/98450-
dc.description.abstractThe effects of inserting an amorphous FeZr layer between the [Pt/Co] multilayer and the CoFeB/Mgo layer in stacks possessing perpendicular magnetic anisotropy are examined. A 1-nm-thick FeZr layer is effective in forming a bcc (001)-textured CoFe layer during annealing by suppression of crystallization at the interface with the multilayer, which is terminated in a close-packed plane. Because FeZr is magnetic, it has an advantage over Ta, an alternative material used for the same purpose. Efficient magnetic coupling between the multilayer and CoFeB/Mgo occurs even for large FeZr layer thicknesses, so the magnetic properties of the stack are only weakly affected. (C) 2014 The Japan Society of Applied Physics-
dc.languageEnglish-
dc.language.isoen-
dc.publisherIOP PUBLISHING LTD-
dc.subjectTUNNEL MAGNETORESISTANCE-
dc.subjectFILMS-
dc.subjectJUNCTION-
dc.titleFormation of a bcc (001)-textured CoFe layer by the insertion of an FeZr layer in multilayer-based stacks with perpendicular magnetic anisotropy-
dc.typeArticle-
dc.contributor.affiliatedAuthorLim, Sang Ho-
dc.contributor.affiliatedAuthorLee, Seong-Rae-
dc.identifier.doi10.7567/APEX.7.063002-
dc.identifier.scopusid2-s2.0-84904662906-
dc.identifier.wosid000338692500021-
dc.identifier.bibliographicCitationAPPLIED PHYSICS EXPRESS, v.7, no.6-
dc.relation.isPartOfAPPLIED PHYSICS EXPRESS-
dc.citation.titleAPPLIED PHYSICS EXPRESS-
dc.citation.volume7-
dc.citation.number6-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusTUNNEL MAGNETORESISTANCE-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusJUNCTION-
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