Formation of a bcc (001)-textured CoFe layer by the insertion of an FeZr layer in multilayer-based stacks with perpendicular magnetic anisotropy
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Tae Young | - |
dc.contributor.author | Won, Young Chan | - |
dc.contributor.author | Lim, Sang Ho | - |
dc.contributor.author | Lee, Seong-Rae | - |
dc.date.accessioned | 2021-09-05T08:35:13Z | - |
dc.date.available | 2021-09-05T08:35:13Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-06 | - |
dc.identifier.issn | 1882-0778 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/98450 | - |
dc.description.abstract | The effects of inserting an amorphous FeZr layer between the [Pt/Co] multilayer and the CoFeB/Mgo layer in stacks possessing perpendicular magnetic anisotropy are examined. A 1-nm-thick FeZr layer is effective in forming a bcc (001)-textured CoFe layer during annealing by suppression of crystallization at the interface with the multilayer, which is terminated in a close-packed plane. Because FeZr is magnetic, it has an advantage over Ta, an alternative material used for the same purpose. Efficient magnetic coupling between the multilayer and CoFeB/Mgo occurs even for large FeZr layer thicknesses, so the magnetic properties of the stack are only weakly affected. (C) 2014 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | TUNNEL MAGNETORESISTANCE | - |
dc.subject | FILMS | - |
dc.subject | JUNCTION | - |
dc.title | Formation of a bcc (001)-textured CoFe layer by the insertion of an FeZr layer in multilayer-based stacks with perpendicular magnetic anisotropy | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lim, Sang Ho | - |
dc.contributor.affiliatedAuthor | Lee, Seong-Rae | - |
dc.identifier.doi | 10.7567/APEX.7.063002 | - |
dc.identifier.scopusid | 2-s2.0-84904662906 | - |
dc.identifier.wosid | 000338692500021 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS EXPRESS, v.7, no.6 | - |
dc.relation.isPartOf | APPLIED PHYSICS EXPRESS | - |
dc.citation.title | APPLIED PHYSICS EXPRESS | - |
dc.citation.volume | 7 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | TUNNEL MAGNETORESISTANCE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | JUNCTION | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.