Determination of g-factor in a quantum well channel with a strong Rashba effect

Abstract

Using the Shubnikov-de Haas oscillation measurement, the g-factor of carriers in a strong Rashba system is observed. To determine g-factor of carriers in the InAs quantum well channel with a strong Rashba effect, the magnetic fields are simultaneously applied along the in-plane direction and the perpendicular direction. The perpendicular field drives the oscillation of conductance for measuring Rashba spin orbit interaction and the in-plane field parallel to the Rashba field interacts with Rashba effect and modifies the intrinsic Rashba parameter. The total field inside the channel is a combination of the Rashba field and the in-plane field, so the modification of Rashba parameter gives a g-factor value of similar to 13 in our system. (C) 2014 AIP Publishing LLC.