Determination of g-factor in a quantum well channel with a strong Rashba effect
- Authors
- Choi, Won Young; Chang, Joonyeon; Lee, Jung Hoon; Koo, Hyun Cheol
- Issue Date
- 7-5월-2014
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.115, no.17
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 115
- Number
- 17
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/98530
- DOI
- 10.1063/1.4856035
- ISSN
- 0021-8979
- Abstract
- Using the Shubnikov-de Haas oscillation measurement, the g-factor of carriers in a strong Rashba system is observed. To determine g-factor of carriers in the InAs quantum well channel with a strong Rashba effect, the magnetic fields are simultaneously applied along the in-plane direction and the perpendicular direction. The perpendicular field drives the oscillation of conductance for measuring Rashba spin orbit interaction and the in-plane field parallel to the Rashba field interacts with Rashba effect and modifies the intrinsic Rashba parameter. The total field inside the channel is a combination of the Rashba field and the in-plane field, so the modification of Rashba parameter gives a g-factor value of similar to 13 in our system. (C) 2014 AIP Publishing LLC.
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Collections - Graduate School > KU-KIST Graduate School of Converging Science and Technology > 1. Journal Articles
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