Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Jae-Sung | - |
dc.contributor.author | Joo, Min-Kyu | - |
dc.contributor.author | Piao, Ming Xing | - |
dc.contributor.author | Ahn, Seung-Eon | - |
dc.contributor.author | Choi, Yong-Hee | - |
dc.contributor.author | Na, Junhong | - |
dc.contributor.author | Shin, Minju | - |
dc.contributor.author | Han, Man-Joong | - |
dc.contributor.author | Jang, Ho-Kyun | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.date.accessioned | 2021-09-05T08:56:39Z | - |
dc.date.available | 2021-09-05T08:56:39Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-05-02 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/98544 | - |
dc.description.abstract | To elucidate the effect of the contact geometry on the device performances, the amorphous InGaZnO field effect transistors with different contact areas were fabricated and compared by the transmission line method. Extended contact-area devices were found to have better electrical performances in field effect mobility and subthreshold swing than those of bar-shaped reference devices. These improvements in the device characteristics resulted from a significantly reduced contact resistance (R-c). From the comparison of specific contact resistivity and transfer length (L-T), the relationship between R-c and contact area including the contact width and the L-T was established and demonstrated that R-c is controllable by optimizing the contact area geometry. (C) 2014 Published by Elsevier B. V. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | RESISTANCE | - |
dc.subject | THICKNESS | - |
dc.title | Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Gyu-Tae | - |
dc.identifier.doi | 10.1016/j.tsf.2014.02.026 | - |
dc.identifier.scopusid | 2-s2.0-84898813393 | - |
dc.identifier.wosid | 000334314100042 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.558, pp.279 - 282 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 558 | - |
dc.citation.startPage | 279 | - |
dc.citation.endPage | 282 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | THICKNESS | - |
dc.subject.keywordAuthor | Amorphous oxide | - |
dc.subject.keywordAuthor | InGaZnO | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.subject.keywordAuthor | Transmission line method | - |
dc.subject.keywordAuthor | Contact resistance | - |
dc.subject.keywordAuthor | Transfer length | - |
dc.subject.keywordAuthor | Specific contact resistivity | - |
dc.subject.keywordAuthor | Contact area | - |
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